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PD - 94071
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C TJ , TSTG
IRF3709 IRF3709S IRF3709L
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
9.0m
ID
90A
TO-220AB IRF3709
D2Pak IRF3709S
TO-262 IRF3709L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 90 57 360 120 3.1 0.96 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
1.04 --- 62 40
Units
C/W
Notes through are on page 11
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02/20/01
IRF3709/3709S/3709L
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.4 7.4 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 10.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 53 --- --- S VDS = 15V, ID = 30A --- 27 41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 10V --- 11 --- VDD = 15V --- 171 --- ID = 30A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
382 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.88 0.82 48 46 48 52 90 A 360 1.3 --- 72 69 72 78 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s
2
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IRF3709/3709S/3709L
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 90A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
100
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF3709/3709S/3709L
4000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
6
ID = 30A
5
V DS= 24V V DS= 15V V DS= 6V
Ciss
4
2000
3
1000
Coss
2
1
0 1
Crss
10 100
0 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C
ID , Drain Current (A)
100
1000 10us
10
100
100us 1ms
TJ = 25 C
1
10
10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3709/3709S/3709L
100
VDS
LIMITED BY PACKAGE
RD
VGS
80
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
60
VGS
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.001 0.01 0.1
PDM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3709/3709S/3709L
EAS , Single Pulse Avalanche Energy (mJ)
1200
15 V
1000
VDS
L
D R IV E R
TOP BOTTOM ID 13A 19A 30A
800
RG
20V
D .U .T
IA S tp 0.0 1
+ - VD D
A
600
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF3709/3709S/3709L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRF3709/3709S/3709L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 )
3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -A6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 )
-B4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 )
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 )
3X 1 .4 0 (.0 5 5 ) 3X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X N O TE S :
0 .93 (.0 3 7 ) 0 .69 (.0 2 7 ) M B AM
3X
0.5 5 (.0 2 2 ) 0.4 6 (.0 1 8 )
0 .3 6 (.0 1 4 )
2 .9 2 (.11 5 ) 2 .6 4 (.10 4 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE
PART NU M BER IR F 1 0 1 0 9246 9B 1M
D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK
8
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IRF3709/3709S/3709L
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
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IRF3709/3709S/3709L
TO-262 Package Outline
TO-262 Part Marking Information
10
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IRF3709/3709S/3709L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 )
1 5 .42 (.60 9 ) 1 5 .22 (.60 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IR E C T IO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4
3 30 .00 ( 14.1 73 ) MAX.
6 0.0 0 (2.36 2) M IN .
N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26 .40 (1 .03 9) 24 .40 (.9 61 ) 3
30.4 0 (1.19 7) M A X. 4
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220AB package
Starting TJ = 25C, L = 0.85mH
RG = 25, IAS = 30A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01
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